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Contact Us
- Contact Person : Ms. Wu Judy
- Company Name : Micro Electronic Technology Development Application Corp. In Shijiazhuang Development Zone
- Tel : 86-311-87091914
- Fax : 86-311-87042577
- Address : Hebei,Shijiazhuang,113# HEZUO ROAD
- Country/Region : China
- Zip : 050051
Other Electronic Components
Aluminum Nitride Microwave Power Device
Aluminum Nitride microwave power device have good heat dissipation, high microwave power and good microwave properties.
FrequencypowerlmpedanceVSWRDC-3GHz10-250W50Ωbelow 1.5Aluminum Nitride microwave power device have good heat dissipation, high microwave power and good...
Ceramic Microwave Power Devices Package
small size, light weight, excellent microwave performance characteristic, high reliability and controlled capacitance value
Part numberUseful frequencyCavity DimensionDimensionSealingLead of numberHeat...
High and Low Pass Filter
small size ,light weight
specificationPart numberLimiting frequencyf0(MHz)Passband insertion loss(dB)Passband standing wave ratio(VSWR)Stop-band repression inhibition(mm3)Outline...
Ceramic Microwave Power Devices Package
small size, light weight, excellent microwave performance characteristic, high reliability and controlled capacitance value
...
Aluminum Nitride Substrates
high thermal conductivity, high electric insulation, and low thermal expansion, low dielectric constant
Thermal conductivitySubstrate thicknessSurface roughnessSurface roughnessMetallization(thin film)Metallization(thick...
Metal Wall-Ceramic Feedthrough Package
the features of high reliability,low translation loss,good shielding and high isolation
Part numberUseful frequencyCavity DimensionDimensionSealingLead of numberHeat sinkQF046/A/B/CS,C,XBand4.50x2.3011.00x8.70x3.40Parallel seam...
Band-pass filter
small size ,light weight
partnumber specification Center frequency f0 (GHz)3dB (GHz)BandwidthInsertion loss@f0(dB) In-band standing wave ratio(VSWR)Stop-band repression inhibitionOutline...
Aluminum Nitride Metallized
high adhesion strength of metallization and high wiring density and can realize high accurate metallized wiring
Metallization SystemThickness of MeralizationMin width of patternTi/Pt/Au,NiCrAu(Thin film),W/Ni/Au(Thick film)3.0μm25μmAluminum Nitride thick and thin fiim...
LTCC Substrate
small size ,light weight
specificationStandarcommon differenceStructureparameterLength of substrateA5~700.5% or 0.2mmWidth of substrateB5~700.5% or 0.2mmLayers of substrateN6~40Thickness of each layer0.097Flatness(after sintering)0.05/10Via interconnectionTypical via(filling...
LDMOS
small size, light weight, excellent microwave performance characteristic, high reliability and controlled capacitance value
STYLEFREQUENCYCAVITY SIZEDIMENSIONSealingPIN COUNTHEAT SINKQF047P,L BAND3.20x2.1014.00x4.10x1.65Adhesive2YesQF051/AP,L...
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